P9006EL Datasheet - UNIKC

P9006EL MOSFET

P9006EL P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 90mΩ @VGS = 10V ID -4A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TA = 25 °C TA = 100 °C ID IDM -4 -2.7 -30 Avalanche Current IAS -24 Avalanche Energy L = 0.1mH EAS 30 Power Dissipation TA = 25 °C TA = 100 °C PD 3.125 1.25 Operating Junction & Stor.

P9006EL Datasheet (341.83 KB)