Si4606 - N+P Complementary Enhancement MOSFET

Si4606 Datasheet Preview — Preview of Si4606 PDF

Datasheet Details

Part number	Si4606
Manufacturer	Nanxin
File Size	465.83 KB
Description	N+P Complementary Enhancement MOSFET
Datasheet	Si4606-Nanxin.pdf

Si4606 Product details

Description

1 Si4606 N-Channel Electrical Characteristics at Ta=250C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay

Features

Low On resistance.
+4.5V drive.
RoHS compliant. Si460N6+P Complementary Enhancement MOSFET Si4606 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD PT Tch Tstg PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mo.

📁 Si4606 Similar Datasheet

SI4618DY - Dual N-Channel 30-V (D-S) MOSFET (Vishay Siliconix)
SI4620DY - N-Channel MOSFET (Vishay)
SI4622DY - Dual N-Channel MOSFET (Vishay)
SI4628DY - N-Channel MOSFET (Vishay)
Si4629-A10 - Single-Chip AM/FM/HD/DAB/DAB+/RDS/RDBS Data Receiver (Silicon Laboratories)
SI4630DY - N-Channel MOSFET (Vishay)
SI4634DY - N-Channel MOSFET (Vishay)
SI4642DY - N-Channel 30-V (D-S) MOSFET (Vishay Siliconix)

Other Datasheets by Nanxin

Si4407 - P-Channel Enhancement MOSFET
Si4435 - P-Channel Enhancement MOSFET
Si4953 - Dual P-Channel MOSFET

Published: Nov 8, 2016 |