Si4435 - P-Channel Enhancement MOSFET

Datasheet Details

Part number	Si4435
Manufacturer	Nanxin
File Size	303.73 KB
Description	P-Channel Enhancement MOSFET
Datasheet	Si4435-Nanxin.pdf

Low On resistance.
-4.5V drive.
RoHS compliant. Si4435 P-Channel Enhancement MOSFET Si4435 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm).

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Published: May 23, 2016 |