RX1214B350Y NPN microwave power transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product speciﬁcation Superseded data of November 1994 1997 Feb 18 Phi.
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange.

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Datasheet Specifications

Part number: RX1214B350Y
Manufacturer: NXP ↗
File Size: 91.62 KB
Datasheet: RX1214B350Y_PhilipsSemiconductors.pdf
Description: NPN microwave power transistor

Applications

* up to 1 ms/10%
* Internal input prematching networks allow an easier design of circuits
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base structure provides high emitter efficiency
* Gold metallization with barrier realizes very

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RX1214B350Y NPN microwave power transistor NXP

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