RX1214B170W Microwave power transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET RX1214B170W Microwave power transistor Product speciﬁcation Supersedes data of December 1994 1997 Feb 18 Philips.
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.

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Datasheet Specifications

Part number: RX1214B170W
Manufacturer: NXP ↗
File Size: 74.63 KB
Datasheet: RX1214B170W_PhilipsSemiconductors.pdf
Description: Microwave power transistor

Applications

* up to 1 ms pulse width, 10% duty factor
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base structure provides high emitter efficiency
* Gold metallization with barrier realizes very stable characteristics and excellent lifetime

RX1214B170W Distributors

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RX1214B170W Microwave power transistor NXP

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