PTB23006U - Microwave power transistor

Datasheet Details

Part number	PTB23006U
Manufacturer	NXP
File Size	88.57 KB
Description	Microwave power transistor
Datasheet	PTB23006U_PhilipsSemiconductors.pdf

NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.

Very high power gain.
Diffused emitter ballasting resistors improve ruggedness.
Interdigitated emitter-base structure.
Gold metallization with barrier layer to prevent electromigration and gold diffusion during life.
Multicell geometry improves power sharing and reduces thermal resistance.
Internal input prematching network.

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Published: Apr 16, 2005 |