PHN210 Datasheet (NXP) - Dual N-channel enhancement mode TrenchMOS transistor

PHN210, Dual N-channel enhancement mode TrenchMOS transistor

Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.

Applications: * Motor and relay drivers * d.c.

to d.c.

converters * Logic level translator The PHN210 is supplied in the SOT96-1 (SO8) surface mounting package.

PINNING PI

PHN210 Features

* Dual device

* Low threshold voltage

* Fast switching

* Logic level compatible

* Surface mount package PHN210 SYMBOL d1 d1 d2 d2 QUICK REFERENCE DATA VDS = 30 V ID = 3.4 A RDS(ON) ≤ 100 mΩ (VGS = 10 V) RDS(ON) ≤ 200 mΩ (VGS = 4.5 V) s1 g1 s2 g2 GENERAL DE