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PHN1013 - N-channel enhancement mode MOS transistor

The PHN1013 by NXP is a N-channel enhancement mode MOS transistor. Below is the official datasheet preview.

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Official preview page of the PHN1013 N-channel enhancement mode MOS transistor datasheet (NXP).

Datasheet Details

Part number PHN1013
Manufacturer NXP
File Size 60.53 KB
Description N-channel enhancement mode MOS transistor
Datasheet download datasheet PHN1013_PhilipsSemiconductors.pdf
Additional preview pages of the PHN1013 datasheet.

PHN1013 Product details

Description

source source source gate drain drain drain drain 1 Top view 4 MAM358 PHN1013 DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package.handbook, halfpage 8 5 d g s Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDSon Tj PARAMETER drain-source voltage drain current (DC) total power dissipation drain-source on-state resistance junction temperature VGS = 10 V CONDITION

Features

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