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PHB18NQ10T - N-channel TrenchMOS transistor

PHB18NQ10T Description

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10T QUICK REFERENCE DATA d .
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. d.

PHB18NQ10T Features

* ’Trench’ technology
* Low on-state resistance
* Fast switching

PHB18NQ10T Applications

* d. c. to d. c. converters
* switched mode power supplies The PHP18NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB18NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD18NQ10T is supplied in the SOT428 (DPAK) surface mounting package.

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N-channel TrenchMOS transistor NXP
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