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PHB119NQ06T - N-channel TrenchMOS standard level FET

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Features

  • s Standard level threshold s Very low on-state resistance. 1.3.

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Datasheet Details

Part number PHB119NQ06T
Manufacturer NXP Semiconductors
File Size 132.25 KB
Description N-channel TrenchMOS standard level FET
Datasheet download datasheet PHB119NQ06T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET Rev. 01 — 05 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Standard level threshold s Very low on-state resistance. 1.3 Applications s Motors, lamps, solenoids s DC-to-DC converters s Uninterruptible power supplies s General industrial applications. 1.4 Quick reference data s VDS ≤ 55 V s Ptot ≤ 200 W s ID ≤ 75 A s RDSon ≤ 7.1 mΩ. 2.
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