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PHB11N03LT - N-channel TrenchMOS transistor Logic level FET

Description

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.

d.c.

to d.c.

switched mode power supplies The PHB11N03LT is supplied in the SOT404 (D2PAK) surface mounting package.

Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching.
  • Logic level compatible g PHB11N03LT, PHD11N03LT SYMBOL d QUICK.

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Full PDF Text Transcription

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible g PHB11N03LT, PHD11N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 10.5 A RDS(ON) ≤ 150 mΩ (VGS = 5 V) RDS(ON) ≤ 130 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHB11N03LT is supplied in the SOT404 (D2PAK) surface mounting package. The PHD11N03LT is supplied in the SOT428 (DPAK) surface mounting package.
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