PHB125N06LT - TrenchMOS transistor Logic level FET

NXP

PHB125N06LT Datasheet Preview — Preview of PHB125N06LT PDF

Datasheet Details

Part number	PHB125N06LT
Manufacturer	NXP ↗
File Size	70.18 KB
Description	TrenchMOS transistor Logic level FET
Datasheet	PHB125N06LT_PhilipsSemiconductors.pdf

PHB125N06LT Product details

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology the device

Features

very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching.

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Published: Mar 22, 2005 |