PBSS5120T - 20 V/ 1 A PNP low VCEsat (BISS) transistor

Name: PBSS5120T
SKU: PBSS5120T-35539

NXP

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Datasheet Details

Part number	PBSS5120T
Manufacturer	NXP
File Size	47.72 KB
Description	20 V/ 1 A PNP low VCEsat (BISS) transistor
Datasheet	PBSS5120T_PhilipsSemiconductors.pdf

PBSS5120T Product details

Description

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 20 1 2 250 UNIT V A A mΩ Inductive load drivers (e.g. = p: made in Hong Kong. = t: made in Malaysia. = W: made in China.

Features

Low collector-emitter saturation voltage VCEsat.
High collector current capability IC and ICM.
High efficiency leading to less heat generation.
Reduced printed-circuit board requirements.
Cost effective alternative for MOSFETs in specific.

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Published: Mar 22, 2005 |