PBSS5130T - PNP Transistor

NXP Semiconductors

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Datasheet Details

Part number	PBSS5130T
Manufacturer	NXP Semiconductors
File Size	193.63 KB
Description	PNP Transistor
Datasheet	PBSS5130T_NXPSemiconductors.pdf

PBSS5130T Product details

Description

PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. 30 1 1.5 220 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package.Top view 2 1 2 MAM256 MARKING TYPE NUMBER PBSS5130T Note 1. = p : made in Hong Kong = t : made in Malaysia = W : made in China. 3E Fig.1 Simplified outline (SOT23) and symbol.

Features

Low collector-emitter saturation voltage VCEsat.
High collector current capability: IC and ICM.
Higher efficiency leading to less heat generation.
Reduced printed-circuit board requirements.
Cost effective alternative to.

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Published: Mar 25, 2010 |