PBSS5130T Datasheet (NXP Semiconductors)

PBSS5130T, PNP Transistor

PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX.

*30 *1 *1.5 220 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package.

Top view 2 1 2 MAM256 MARKING TYPE NUMBER PBSS5

PBSS5130T Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability: IC and ICM

* Higher efficiency leading to less heat generation

* Reduced printed-circuit board requirements

* Cost effective alternative to MOSFETS in specific applications.