PBSS4230T - NPN low VCEsat (BISS) transistor

NXP

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Datasheet Details

Part number	PBSS4230T
Manufacturer	NXP
File Size	47.87 KB
Description	NPN low VCEsat (BISS) transistor
Datasheet	PBSS4230T_PhilipsSemiconductors.pdf

PBSS4230T Product details

Description

NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. = p: made in Hong Kong. = t: made in Malaysia. = W: made in China. DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) 3D 1 Top view PBSS4230T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector

Features

Low collector-emitter saturation voltage VCEsat.
High collector current capability IC and ICM.
High efficiency leading to less heat generation.
Reduced printed-circuit board requirements.
Cost effective alternative to MOSFETs in specific.

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Published: Mar 22, 2005 |