PBSS2540M Datasheet (NXP) - 0.5 A NPN low VCEsat (BISS) transistor

PBSS2540M, 0.5 A NPN low VCEsat (BISS) transistor

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.

40 500 1 <500 UNIT V mA A mΩ 3 3 1 2 DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package.

PNP complement: PBSS3540M.

MARKING TYPE NUMBER PBSS2540M MARK

PBSS2540M Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability IC and ICM

* High efficiency leading to reduced heat generation

* Reduced printed-circuit board requirements. APPLICATIONS

* Power management:

* DC-DC converter