MW6S010GMR1, MW6S010MR1 RF Power Field Effect Transistor

NXP

Description

Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1.There are no form, fit or function changes with this part replacement.N suffix in.

📥 Download Datasheet

MW6S010GMR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MW6S010GMR1, MW6S010MR1. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: MW6S010GMR1, MW6S010MR1
Manufacturer: NXP ↗
File Size: 711.54 KB
Datasheet: MW6S010MR1-NXP.pdf
Description: RF Power Field Effect Transistor
Note: This datasheet PDF includes multiple part numbers: MW6S010GMR1, MW6S010MR1.
Please refer to the document for exact specifications by model.

Applications

* with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
* Typical Two - Tone Performance @ 960 MHz, VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain
* 18 dB Drain Efficiency
* 32% IMD
* - 37 dBc

MW6S010GMR1 Distributors

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MW6S010MR1 Power Field Effect Transistor NXP

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