Datasheet Details
- Part number
- MW6S004NT1
- Manufacturer
- Freescale Semiconductor
- File Size
- 522.37 KB
- Datasheet
- MW6S004NT1_FreescaleSemiconductor.pdf
- Description
- RF Power Field Effect Transistor
MW6S004NT1 Description
Freescale Semiconductor Technical Data Document Number: MW6S004N Rev.2, 2/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lat.
100 nF Chip Capacitor 9.
MW6S004NT1 Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* On - Chip RF Feedback for Broadband Stability
* Integrated ESD Protection
* RoHS Compliant
* In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MW6S004NT1
1 - 2000 MHz
MW6S004NT1 Applications
* with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
* Typical Two - Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain
* 18 dB Drain Efficiency
* 33% IMD
* - 34 dBc
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