MRFX1K80H Datasheet (NXP) - RF Power LDMOS Transistor

MRFX1K80H, RF Power LDMOS Transistor

NXP Semiconductors Technical Data Document Number: MRFX1K80H Rev.

1, 09/2018 RF Power LDMOS Transistor High Ruggedness N Channel Enhancement Mode Lateral MOSFET MRFX1K80H This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications.

Its unmatched input and output design supports frequency use from 1.8 to 400 MHz.

Typical Performance Frequency (MHz) Signal Type VDD (V) Pout (W) Gps (dB) D (%) 27 (

MRFX1K80H Features

* Unmatched input and output allowing wide frequency range utilization

* Device can be used single

* ended or in a push

* pull configuration

* Qualified up to a maximum of 65 VDD operation

* Characterized from 30 to 65 V for extended power range

* High breakdown volta