MRFE6VS25NR1 - RF Power LDMOS Transistors

Datasheet Details

Wide operating frequency range.
Extreme ruggedness.
Unmatched, capable of very broadband operation.
Integrated stability enhancements.
Low thermal resistance.
Extended ESD protection circuit  2012, 2019 NXP B. V. RF Device Data NXP Semiconductors Document Number: MRFE6VS25N Rev. 2, 03/2019 MRFE6VS25NR1 MRFE6VS25GNR1 1.8--2000 MHz, 25 W, 50 V.

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Published: Jun 3, 2019 |