MRFE6P3300HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistor

MRFE6P3300HR3, RF Power Field Effect Transistor

Ferrite Beads, Short 1.0 μF, 50 V Tantulum Chip Capacitors 0.1 μF, 50 V Chip Capacitors 1000 pF Chip Capacitors 100 pF Chip Capacitors 8.2 pF Chip Capacitors 9.1 pF Chip Capacitor 1.8 pF Chip Capacitor 47 μF, 50 V Electrolytic Capacitors 470 μF, 63 V Electrolytic Capacitors 22 pF Chip Capacitors 50

Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev.

0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.

The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 32 volt analog or digital television transmitter equipment.

Typical Narrowband Two - Tone Perf

MRFE6P3300HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Designed for Push - Pull Operation Only

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* RoHS Compliant