Datasheet4U Logo Datasheet4U.com

MRFE6S9200HSR3 - RF Power FET

Download the MRFE6S9200HSR3 datasheet PDF. This datasheet also covers the MRFE6S9200HR3 variant, as both devices belong to the same rf power fet family and are provided as variant models within a single manufacturer datasheet.

Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRFE6S9200H Rev. 1, 12/2008 MRFE6S9200HR3 MRFE6S9200HSR3 880 MHz, 58 W AVG. , 28 V SINGLE W - CDMA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRFE6S9200HR3_MotorolaSemiconductorProducts.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MRFE6S9200HSR3
Manufacturer Motorola Semiconductor Products
File Size 432.83 KB
Description RF Power FET
Datasheet download datasheet MRFE6S9200HSR3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRFE6S9205HR3 RF Power Field Effect Transistors Freescale Semiconductor
MRFE6S9205HSR3 RF Power Field Effect Transistors Freescale Semiconductor
MRFE6S9045NR1 RF Power FET Freescale Semiconductor
MRFE6S9060NR1 RF Power FET Freescale Semiconductor
MRFE6S9125NBR1 N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor

Other Datasheets by Motorola Semiconductor Products

Part Number Description
MRFE6S9200HR3 RF Power FET
MRFE6S9201HR3 RF Power Field Effect Transistors
MRFE6S9201HSR3 RF Power Field Effect Transistors
MRF8P20160HR3 RF Power Field Effect Transistors
MRF8P20160HSR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., f = 880 MHz, 3GPP Test Model 1, 64 DPCH with 45.2% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 21 dB Drain Efficiency — 35% Device Output Signal PAR — 6.36 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 40 dBc in 3.