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MRF1K50N - RF Power LDMOS Transistors

Features

  • High drain--source avalanche energy absorption capability.
  • Unmatched input and output allowing wide frequency range utilization.
  • Device can be used single--ended or in a push--pull configuration.
  • Characterized from 30 to 50 V for ease of use.
  • Suitable for linear.

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Other Datasheets by NXP Semiconductors

Part Number Description
MRF1K50GN RF Power LDMOS Transistors
MRF1K50H RF Power LDMOS Transistor
MRF101AN RF Power LDMOS Transistors
MRF101BN RF Power LDMOS Transistors
MRF13750H RF Power LDMOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD (%) 87.5--108 (1,2) 230 (3,4) CW Pulse (100 μsec, 20% Duty Cycle) 1421 CW 1500 Peak 23.1 23.4 83.2 75.
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