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MRF1K50N - RF Power LDMOS Transistors

NXP

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Datasheet Details

Part number	MRF1K50N
Manufacturer	NXP
File Size	821.60 KB
Description	RF Power LDMOS Transistors
Datasheet	MRF1K50N-NXP.pdf

MRF1K50N Product details

Features

High drain--source avalanche energy absorption capability.
Unmatched input and output allowing wide frequency range utilization.
Device can be used single--ended or in a push--pull configuration.
Characterized from 30 to 50 V for ease of use.
Suitable for linear.

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Published: Aug 5, 2019 |