LV2327E40R Datasheet (NXP) - NPN microwave power transistor

LV2327E40R, NPN microwave power transistor

1 Common emitter class A linear wideband power amplifiers in the 2.3 to 2.7 GHz band.

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT445B metal ceramic flange package, with emitter connected to the flange.

3 2 Top view MAM315 c b 3 e Marking code: 2327E40R.

Fig.1 Si

LV2327E40R Features

* Interdigitated structure provides high emitter efficiency

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Multicell geometry g