Datasheet4U Logo Datasheet4U.com

CGY2014ATW - GSM/DCS/PCS power amplifier

Description

The CGY2014ATW is a dual-band GSM/DCS/PCS GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier.

The circuit is specifically designed to operate at 3.6 V battery supply voltage.

Features

  • Operates at 3.6 V battery supply voltage.
  • Power Amplifier (PA) output power: 35 dBm in GSM band and 32.5 dBm in DCS/PCS band.
  • Input power: 5 dBm in GSM band and DCS/PCS band.
  • Wide operating temperature range from Tamb =.
  • 20 to +85 °C.
  • HTSSOP20 exposed die pad package.

📥 Download Datasheet

📁 Similar Datasheet

  • CGY21 - GaAs MMIC (Siemens Semiconductor Group)
  • CGY2128UH-C2 - Low Noise Amplifier (MACOM)
  • CGY2394SUH-C1 - True Time Delay (MACOM)
  • CGY0819 - GaAs MMIC (Siemens Semiconductor Group)
  • CGY0918 - GaAs MMIC (Siemens Semiconductor Group)
  • CGY1032 - 1 GHz - 32 dB gain GaAs push-pull amplifier (NXP Semiconductors)
  • CGY1041 - 1 GHz - 21 dB gain GaAs push-pull amplifier (NXP Semiconductors)
  • CGY1043 - 1 GHz - 23 dB gain GaAs push-pull amplifier (NXP Semiconductors)
  • CGY1047 - 27 dB gain GaAs push-pull amplifier (NXP Semiconductors)
  • CGY120 - GaAs MMIC (Siemens Semiconductor Group)
Other Datasheets by NXP

Full PDF Text Transcription

Click to expand full text
INTEGRATED CIRCUITS DATA SHEET CGY2014ATW GSM/DCS/PCS power amplifier Preliminary specification File under Integrated Circuits, IC17 2000 Nov 28 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier FEATURES • Operates at 3.6 V battery supply voltage • Power Amplifier (PA) output power: 35 dBm in GSM band and 32.5 dBm in DCS/PCS band • Input power: 5 dBm in GSM band and DCS/PCS band • Wide operating temperature range from Tamb = −20 to +85 °C • HTSSOP20 exposed die pad package. APPLICATIONS • Dual-band systems: Low Band (LB) from 880 to 915 MHz hand-held transceivers for E-GSM and High Band (HB) from 1710 to 1910 MHz for DCS/PCS applications.
Published: |