Description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFET) GaAs dies.
Features
- Excellent linearity, stability and reliability Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermally optimized design Superior levels of ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).
- Integrated ring wave surge protection.
- Power gain is specified for both 870 MHz and 1003 MHz bandwidth
1.3 A.