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BUK98150-55 - TrenchMOS transistor Logic level FET

BUK98150-55 Description

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.

BUK98150-55 Applications

* BUK98150-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 5.5 1.8 150 150 UNIT V A W ˚C mΩ PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab)

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TrenchMOS transistor Logic level FET NXP
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