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BUK7618-55 - N-channel TrenchMOS standard level FET

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

  • AEC Q101 compliant.
  • Electrostatically robust due to integrated protection diodes.
  • Low conduction losses due to low on-state resistance 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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D2PAK BUK7618-55 N-channel TrenchMOS standard level FET Rev. 2 — 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Electrostatically robust due to integrated protection diodes „ Low conduction losses due to low on-state resistance 1.3 Applications „ Automotive and general purpose power switching 1.4 Quick reference data Table 1.
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