Datasheet4U Logo Datasheet4U.com

BUK7108-40AIE - TrenchPLUS standard level FET

Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection.

Features

  • s ESD protection s Integrated current sensor s Q101 compliant s Standard level compatible. 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK7207-30B TrenchMOS standard level FET NXP Semiconductors
BUK7208-40B TrenchMOS standard level FET NXP Semiconductors
BUK7210-55B N-Channel MOSFET NXP Semiconductors
BUK72150-55A N-channel TrenchMOS standard level FET nexperia
BUK7222-55A TrenchMOS standard level FET NXP Semiconductors

Other Datasheets by NXP Semiconductors

Part Number Description
BUK7105-40AIE TrenchPLUS standard level FET
BUK7105-40ATE N-channel TrenchPLUS standard level FET
BUK7107-40ATC TrenchPLUS standard level FET
BUK7107-55AIE TrenchPLUS standard level FET
BUK714R1-40BT TrenchMOS standard level FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com BUK71/7908-40AIE TrenchPLUS standard level FET Rev. 02 — 24 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. 1.2 Features s ESD protection s Integrated current sensor s Q101 compliant s Standard level compatible. 1.3 Applications s Variable Valve Timing for engines s Electrical Power Assisted Steering. 1.4 Quick reference data s VDS ≤ 40 V s ID ≤ 117 A s RDSon = 6 mΩ (typ) s ID/Isense = 500 (typ). 2.
Published: |