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BUK563-80B - PowerMOS Transistor Logic level FET

BUK563-80B Description

Philips Semiconductors Product specification PowerMOS Transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BUK563-80B Applications

* BUK563-80B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 80 16 75 175 0.155 UNIT V A W ˚C Ω PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DE

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PowerMOS Transistor Logic level FET NXP
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