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BUK563-48C - PowerMOS transistor Voltage clamped logic level FET

BUK563-48C Description

Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET GENERAL .
Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.

BUK563-48C Applications

* The device is intended for use in automotive applications. It has built-in zener diodes providing active drain voltage clamping. BUK563-48C QUICK REFERENCE DATA SYMBOL V(CL)DSR ID Ptot Tj WDSRR RDS(ON) PARAMETER Drain-source clamp voltage Drain current (DC) Total power dissipation Junction temper

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PowerMOS transistor Voltage clamped logic level FET NXP
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