Datasheet4U Logo Datasheet4U.com

BU2525AW - Silicon Diffused Power Transistor

Description

New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

📥 Download Datasheet

Datasheet preview – BU2525AW

Datasheet Details

Part number BU2525AW
Manufacturer NXP Semiconductors
File Size 74.99 KB
Description Silicon Diffused Power Transistor
Datasheet download datasheet BU2525AW Datasheet
Additional preview pages of the BU2525AW datasheet.

📁 Similar Datasheet

  • BU2525AW - SILICON POWER TRANSISTOR (SavantIC)
  • BU2525A - SILICON POWER TRANSISTOR (SavantIC)
  • BU2525A - NPN Transistor (INCHANGE)
  • BU2525AF - SILICON POWER TRANSISTOR (SavantIC)
  • BU2525AF - NPN Transistor (INCHANGE)
  • BU2525AX - SILICON POWER TRANSISTOR (SavantIC)
  • BU2525AX - NPN Transistor (INCHANGE)
  • BU2525DF - SILICON POWER TRANSISTOR (SavantIC)
  • BU2525DF - NPN Transistor (INCHANGE)
  • BU2525DW - Silicon NPN Power Transistor (INCHANGE)
Other Datasheets by NXP
  • BU2525A - Silicon Diffused Power Transistor
  • BU2525AF - Silicon Diffused Power Transistor
  • BU2525AX - Silicon Diffused Power Transistor
  • BU2525DF - Silicon Diffused Power Transistor
  • BU2525DW - Silicon Diffused Power Transistor
  • BU2525DX - Silicon Diffused Power Transistor
  • BU2520A - Silicon Diffused Power Transistor
  • BU2520AF - Silicon Diffused Power Transistor

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 TYP. 8 0.2 MAX. 1500 800 12 30 125 5.0 0.35 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 8.0 A; IB = 1.6 A ICsat = 8.0 A; IB(end) = 1.
Published: |