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BU2525DX - Silicon Diffused Power Transistor

Description

New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL VCESM IC ICM Ptot VCEsat VCEO ICsat ts PARAMETER Collector-emitter voltage peak value Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector-emitter voltage (open base) Collector saturation current Storage time CONDITIONS VBE = 0 V Ths ≤ 25 ˚C IC = 8.0 A; IB = 1.6 A ICsat = 8.0 A; IB(end) = 1.1 A TYP. 8.0 3.0 MAX. 1500 12 30 45 5.0 800 4.
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