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BU2520AX - Silicon Diffused Power Transistor

Description

New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 6.0 0.2 MAX. 1500 800 10 25 45 5.0 0.35 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 6.0 A; IB = 1.2 A ICsat = 6.0 A; IB(end) = 0.
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