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BU2520D - Silicon Diffused Power Transistor

Description

New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 6 0.35 MAX. 1500 800 10 25 125 5.0 2.2 0.5 UNIT V V A A W V A V µs Tmb ≤ 25 ˚C IC = 6.0 A; IB = 1.2 A IF = 6.
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