Datasheet4U Logo Datasheet4U.com

BST82 - N-channel transistor

Description

N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film circuits for telephone ringer and for application with relay, high-speed and line-transformer drivers.

Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No second breakdown.
  • Low RDS(on) Transfer admittance ID = 175 mA; VDS = 5 V.

📥 Download Datasheet

Datasheet preview – BST82

Datasheet Details

Part number BST82
Manufacturer NXP Semiconductors
File Size 74.39 KB
Description N-channel transistor
Datasheet download datasheet BST82 Datasheet
Additional preview pages of the BST82 datasheet.

📁 Similar Datasheet

  • BST82 - SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET (Zetex Semiconductors)
  • BST15 - SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR (Zetex Semiconductors)
  • BST16 - PNP TRANSISTOR (Zetex Semiconductors)
  • BST23C052V - TVS Diode (UMW)
  • BST23C122V - TVS Diode (UMW)
  • BST23C152V - TVS Diode (UMW)
  • BST23C242V - TVS Diode (UMW)
  • BST23C362V - TVS Diode (UMW)
  • BST39 - GENERAL PURPOSE TRANSISTOR (HOTTECH)
  • BST39 - NPN High-Voltage Transistor (GME)
Other Datasheets by NXP
  • BST80 - N-channel transistor
  • BST84 - N-channel transistor
  • BST86 - N-channel transistor
  • BST100 - P-channel transistor
  • BST120 - P-channel transistor
  • BST122 - P-channel transistor
  • BST15 - PNP transistors
  • BST16 - PNP transistors

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET BST82 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film circuits for telephone ringer and for application with relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No second breakdown • Low RDS(on) Transfer admittance ID = 175 mA; VDS = 5 V PINNING - SOT23 1 2 3 PIN CONFIGURATION = gate = source = drain  Yfs typ.
Published: |