BST80 - N-channel transistor

NXP

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Datasheet Details

Part number	BST80
Manufacturer	NXP
File Size	74.91 KB
Description	N-channel transistor
Datasheet	BST80_PhilipsSemiconductors.pdf

BST80 Product details

Description

d DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT89 package.1 Bottom view 2 3 MAM355 s Marking code: KM Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA SYMBOL VDS VGSO ID Ptot RDSon yfs PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) total power dissipation drain-source on-state resistance forward transfer admittance Tamb ≤ 25 °C ID = 500 mA; VGS = 10 V ID = 500 mA; VDS = 15 V open drain CONDITIONS

Features

Low drain-source on-state resistance.
Direct interface to C-MOS, TTL, etc.
High-speed switching.
No secondary breakdown.

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Published: Mar 23, 2005 |