Datasheet4U Logo Datasheet4U.com

BSH301 - Dual N-channel enhancement mode MOS transistor

BSH301 Description

DISCRETE SEMICONDUCTORS DATA SHEET BSH301 Dual N-channel enhancement mode MOS transistor Objective specification 1999 Apr 06 Philips Semiconductors .
Two N-channel enhancement mode MOS transistors in an 8-pin plastic TSSOP8 package.

BSH301 Features

* 40 mΩ on-state resistance at 2.5 V gate drive
* RDSon rating down to 1.8 V

BSH301 Applications

* Li-Ion safety switch

📥 Download Datasheet

Preview of BSH301 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • BSH111 - N-Channel MOSFET (NXP Semiconductors)
  • BSH111BK - N-Channel MOSFET (nexperia)
  • BSH114 - N-Channel MOSFET (VBsemi)
  • BSH201 - P-Channel 60V MOSFET (VBsemi)
  • BSH205 - P-Channel 20V MOSFET (VBsemi)
  • BSH205G2 - P-channel Trench MOSFET (nexperia)
  • BSH205G2A - P-channel Trench MOSFET (nexperia)

📌 All Tags

Dual N-channel enhancement mode MOS transistor NXP
NXP BSH301-like datasheet