BSH102 - N-channel enhancement mode MOS transistor

NXP

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Datasheet Details

Part number	BSH102
Manufacturer	NXP
File Size	96.87 KB
Description	N-channel enhancement mode MOS transistor
Datasheet	BSH102_PhilipsSemiconductors.pdf

BSH102 Product details

Description

handbook, halfpage 3 d g s DESCRIPTION N-channel enhancement mode MOS transistor in a SOT23 SMD package.Top view Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation VDS = VGS ; ID = 1 mA Ts = 80 °C VGS = 10 V; ID = 0.5 A Ts = 80 °C CAUTION Thi

Features

Very low threshold.
High-speed switching.
No secondary breakdown.
Direct interface to C-MOS, TTL etc.

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Published: Mar 23, 2005 |