BLV935 Datasheet (NXP) - UHF power transistor

BLV935, UHF power transistor

NPN silicon planar epitaxial transistor intended for common emitter class-AB operation.

The transistor has internal input matching by means of MOS capacitors and is encapsulated in a 6-lead SOT273 flange envelope with a ceramic cap.

All leads are isolated from the flange.

handbook, halfpage c b P

BLV935 Features

* Emitter ballasting resistors for an optimum temperature profile

* Gold metallization ensures excellent reliability

* Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS

* Base stations in the 820 to 980 MHz range. 1