BLV90 - UHF power transistor

Datasheet Details

Part number	BLV90
Manufacturer	NXP
File Size	54.16 KB
Description	UHF power transistor
Datasheet	BLV90_PhilipsSemiconductors.pdf

NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band.

BLV90.
diffused emitter-ballasting resistors for an optimum temperature profile.
gold metallization ensures excellent reliability.
the device can be applied at rated output power without an external heatsink when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base. QUICK.

📁 BLV90 Similar Datasheet

Other Datasheets by NXP

Published: Mar 23, 2005 |