BLS8G2731L-400P Datasheet (NXP) - LDMOS S-band radar power transistor

BLS8G2731L-400P, LDMOS S-band radar power transistor

400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.1 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 200 mA; in a class-AB demo test circuit.

Test signal f (GHz) VDS (V) PL(1dB) (W) Gp [1] (d

BLS8G2731L-400P Features

* High efficiency

* Excellent ruggedness

* Designed for S-band operation

* Excellent thermal stability

* Easy power control

* Integrated dual sided ESD protection enables excellent off-state isolation

* High flexibility with respect to pulse formats

* Internally match