Datasheet Details
Part number:
BLS8G2731LS-400P, BLS8G2731L-400P
Manufacturer:
Ampleon
File Size:
363.99 KB
Description:
Ldmos s-band radar power transistor.
Note:
This datasheet PDF includes multiple part numbers: BLS8G2731LS-400P, BLS8G2731L-400P.
Please refer to the document for exact specifications by model.
BLS8G2731LS-400P, BLS8G2731L-400P, LDMOS S-band radar power transistor
400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.1 GHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s; = 2 %; IDq = 200 mA; in a class-AB demo test circuit.
Test signal f VDS PL(1dB) Gp [1] D [1] PL(2dB)
BLS8G2731LS-400P Features
* High efficiency
* Excellent ruggedness
* Designed for S-band operation
* Excellent thermal stability
* Easy power control
* Integrated dual sided ESD protection enables excellent off-state isolation
* High flexibility with respect to pulse formats
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