BLS7G2933S-150 - LDMOS S-band radar power transistor

Datasheet Details

Part number	BLS7G2933S-150
Manufacturer	NXP
File Size	107.45 KB
Description	LDMOS S-band radar power transistor
Datasheet	BLS7G2933S-150-NXP.pdf

150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.

Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: Output power = 150 W Power gain = 13.5 dB Efficiency = 47 %.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse formats.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (2.9 GHz to 3.3 GHz).

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Published: Mar 7, 2016 |