Datasheet Details
Part number:
BLS7G3135LS-350P, BLS7G3135L-350P
Manufacturer:
Ampleon
File Size:
383.91 KB
Description:
Ldmos s-band radar power transistor.
Note:
This datasheet PDF includes multiple part numbers: BLS7G3135LS-350P, BLS7G3135L-350P.
Please refer to the document for exact specifications by model.
BLS7G3135LS-350P, BLS7G3135L-350P, LDMOS S-band radar power transistor
350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB production test circuit.
Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (
BLS7G3135LS-350P Features
* Easy power control
* Integrated ESD protection
* High flexibility with respect to pulse formats
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (3.1 GHz to 3.5 GHz)
* Internally matched for ease of use
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