BLP8G27-10 Datasheet (NXP) - Power LDMOS transistor

BLP8G27-10, Power LDMOS transistor

10 W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz.

Table 1.

Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 110 mA; in a class-AB application circuit.

Test signal f IDq VDS PL(AV) Gp D ACPR

BLP8G27-10 Features

* High efficiency

* Excellent ruggedness

* Designed for broadband operation

* Excellent thermal stability

* High power gain

* Integrated ESD protection

* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications

* CDMA