BLP8G20S-80P - Power LDMOS transistor

Description

80 W LDMOS transistor for base station applications at frequencies from 1800 MHz to 2200 MHz.

Table 1.

Typical performance Typical RF performance per section at Tcase = 25 C in a common Doherty demo board.

Features

• Designed for broadband operation (1800 MHz to 2200 MHz).
• Excellent ruggedness.
• High efficiency.
• Excellent thermal stability.
• Internally matched for ease of use.
• High power gain.
• Integrated ESD protection.
• Compliant to Directive 2002/95/EC, regarding Restriction of.