Datasheet Details
- Part number
- BLF4G10LS-120
- Manufacturer
- NXP ↗
- File Size
- 140.80 KB
- Datasheet
- BLF4G10LS-120_PhilipsSemiconductors.pdf
- Description
- UHF power LDMOS transistor
BLF4G10LS-120 Description
www.DataSheet4U.com BLF4G10LS-120 UHF power LDMOS transistor Rev.01 * 10 January 2006 Product data sheet 1.Product profile 1.1 General desc.
120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
BLF4G10LS-120 Features
* s Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 650 mA x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efficiency = 40 % (typ) x ACPR400 =
* 61 dBc (typ) x ACPR600 =
* 72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s
BLF4G10LS-120 Applications
* at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance f = 920 MHz to 960 MHz; Th = 25 °C; in a class-AB production test circuit; typical values. Mode of operation CW GSM EDGE 2-tone
[1] [2]
VDS (V) 28 28 28
PL (W) 120 48 (AV)
Gp ηD (dB) (%) 19 19 57 40 46
ACPR400 (dBc)
* 6
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