BLF4G10-120 Datasheet (NXP) - UHF power LDMOS transistor

BLF4G10-120, UHF power LDMOS transistor

120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

Table 1: Typical performance RF performance at Th = 25 °C in a common base class-AB test circuit.

Mode of operation CW 2-tone [1] [2] f (MHz) VDS (V) PL (W) 120 48 (AV) Gp (dB) (typ) 19 19 ηD (%)

BLF4G10-120 Features

* s Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efﬁciency = 40 % (typ) x ACPR400 =

* 61 dBc (typ) x ACPR600 =

* 72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s Excellent ru