BF1202WR - N-channel dual-gate PoLo MOS-FETs

NXP

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Datasheet Details

Part number	BF1202WR
Manufacturer	NXP
File Size	116.06 KB
Description	N-channel dual-gate PoLo MOS-FETs
Datasheet	BF1202WR_PhilipsSemiconductors.pdf

BF1202WR Product details

Description

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1202R marking code: LEp Fig.2 Simplified outline (SOT143R).3 page 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.Integrated diodes between gates and source protect against excessive input voltage surges.The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.QUICK REFERENCE DATA SYMBOL VDS

Features

Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier.
Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

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Other Datasheets by NXP

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Published: Mar 23, 2005 |